Publication details
Preliminary comparison of ballistic electron emission spectroscopy measurements on InAs quantum dots in a GaAs/AlGaAs heterostructure grown by MBE and MOVPE
Journal Article
serial: Microelectronics Journal vol.40, 3 (2009), p. 496-498
research: CEZ:AV0Z20670512
research: CEZ:AV0Z10100521
research: CEZ:AV0Z10750506
project(s): GA202/05/0242GA ČR
keywords: quantum dots, ballistic transport, semiconductor heterojunction
abstract (eng):
Self-assembled InAs quantum dots (SAQDs) in GaAs/GaAlAs structures grown by molecular beam epitaxy (MBE) and metal-organic vapour phase epitaxy (MOVPE) of similar size was examined by ballistic electron emission spectroscopy. Ballistic current-voltage characteristics through the QD in the voltage range from 0.55 to 0.9 V (range where the presence of resonance states of QD is expected) with its derivative (the derivation of the spectroscopic characteristics represents quantum levels in the QD) are given. Differences in the intensities and sharpnesses of the QD levels for MBE and MOVPE grown QDs are observed.
RIV: BM